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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION *With TO-3 package *Complement to type 2SD427 *High power dissipation APPLICATIONS *Power amplifier applications *Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 8 80 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB557 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter breakdown voltage IC=-0.1A ;IB=0 IE=-10mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-5V VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-5V -120 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.5 V Base-emitter on voltage -2.0 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 40 140 DC current gain 20 Output capacitance 280 pF Transition frequency 7 MHz hFE-1 Classifications R 40-80 O 70-140 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB557 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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