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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB557
DESCRIPTION *With TO-3 package *Complement to type 2SD427 *High power dissipation APPLICATIONS *Power amplifier applications *Recommended for 50W high-fidelity audio frequency amplifier output stage
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 8 80 150 -65~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB557
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT
Collector-emitter breakdown voltage
IC=-0.1A ;IB=0 IE=-10mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-5V VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-5V
-120
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-2.5
V
Base-emitter on voltage
-2.0
V
Collector cut-off current
-0.1
mA
Emitter cut-off current
-0.1
mA
DC current gain
40
140
DC current gain
20
Output capacitance
280
pF
Transition frequency
7
MHz
hFE-1 Classifications R 40-80 O 70-140
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB557
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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